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參數(shù)資料
| 型號： | BLW29 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BLW29 |
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLW29
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
36 V
18 V
4 V
2,75 A
8 A
53 W
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
MGP414
1
10
1
1
10
10
2
IC
(A)
VCE (V)
Tmb = 25
°
C
Th = 70
°
C
Fig.3
R.F. power dissipation;
V
CE
≤
16,5 V; f
≥
1 MHz.
handbook, halfpage
0
50
100
0
40
MGP415
20
Prf
(W)
Th (
°
C)
continuous
d.c. operation
derate by 0.25 W/K
continuous
r.f. operation
derate by
0.3 W/K
short-time
operation
during mismatch
THERMAL RESISTANCE
(dissipation = 15 W; T
mb
= 77
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
3,7 K/W
3,05 K/W
0,45 K/W
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| BLW30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLW31 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW31_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW32 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW33 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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