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參數(shù)資料
| 型號(hào)： | BLW29 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | BLW29 |
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLW29
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B or C operated mobile transmitters
with a nominal supply voltage of
13,5 V. Because of the high gain and
excellent power handling capability,
the transistor is especially suited for
design of wide-band and
semi-wide-band v.h.f. amplifiers.
Together with a BFQ42 driver stage,
the chain can deliver 15 W with a
maximum drive power of 120 mW at
175 MHz. The transistor is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions with a supply over-voltage
to 16,5 V.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
>
10
η
%
z
i
Y
L
mS
c.w. class-B
c.w. class-B
13,5
12,5
175
175
15
15
>
60
typ. 67
1,3
+
j0,68
180
j54
typ. 10, 5
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
MSB056
2
3
1
4
PINNING - SOT120
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLW30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLW31 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW31_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW32 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW33 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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