參數(shù)資料
型號(hào)： BLV935
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power transistor
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-273, 6 PIN
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 85K
代理商： BLV935
1995 Jun 29
3
Philips Semiconductors
Product specification
UHF power transistor
BLV935
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
70
30
3
4
4
70
+150
+200
V
V
V
A
A
W
°
C
°
C
up to T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
P
tot
= 70 W; T
mb
= 25
°
C
2.5
K/W
R
th mb-h
0.3
K/W
Fig.2 DC SOAR.
(1) T
mb
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
10
1
1
10
10
IC
(A)
VCE(V)
MLD140
2
1
(2)
(1)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
Pot
(W)
0
20
40
80
60
0
40
80
120
160
Th
o
(2)
MLD141
(1)
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