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參數(shù)資料
| 型號： | BLV33 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF linear power transistor(VHF線性功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-147, 4 PIN |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 130K |
| 代理商： | BLV33 |
1996 Oct 10
9
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit.
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
(1) C10 positioned under C11.
handbook, full pagewidth
MGG150
C1
C2
C3
L1
C7
L3
R1
C5
C6
C12
C4
C9
L2
L5
L4
C8
C11
L6
C14
C13
C10
(1)
+
VBB
+
VCC
R2
117
50
50
input
50
output
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相關(guān)代理商/技術(shù)參數(shù) |
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| BLV33F | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLV34 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV36 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 8.5A I(C) | SOT-161 |
| BLV37 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 10A I(C) | SOT-179VAR |
| BLV38 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 10A I(C) | SOT-179VAR |
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