參數(shù)資料
型號(hào): BLV33
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF linear power transistor(VHF線性功率晶體管)
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-147, 4 PIN
文件頁(yè)數(shù): 14/20頁(yè)
文件大?。?/td> 130K
代理商: BLV33
1996 Oct 10
14
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
Fig.17 Load power as a function of source power;
typical values.
V
CE
= 28 V; I
C(ZS)
= 0.1 A; T
h
= 70
°
C; f
vision
= 224.25 MHz.
handbook, halfpage
0
10
20
30
80
40
0
MGG117
PS (W)
PL
(W)
Fig.18 Power gain and efficiency as functions of
load power; typical values.
V
CE
= 28 V; I
C(ZS)
= 0.1 A; T
h
= 70
°
C; f
vision
= 224.25 MHz.
handbook, halfpage
0
100
2.5
5
MGG125
50
Gp
(dB)
Gp
PL (W)
75
25
50
η
c
(%)
η
c
Ruggedness in class-AB operation
The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR
2 through all phases) up to 60 W
(RMS) and 90 W (PEP) under the following conditions: V
CE
= 28 V; T
h
= 70
°
C; f = 224.25 MHz; R
th mb-h
= 0.15 K/W.
相關(guān)PDF資料
PDF描述
BLV57 UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
BLV58 UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
BLV59 UHF linear power transistor
BLV857 UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
BLV859 UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLV33F 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
BLV34 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
BLV36 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 8.5A I(C) | SOT-161
BLV37 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 10A I(C) | SOT-179VAR
BLV38 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 10A I(C) | SOT-179VAR