參數(shù)資料
型號: BLV33
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF linear power transistor(VHF線性功率晶體管)
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-147, 4 PIN
文件頁數(shù): 3/20頁
文件大?。?/td> 130K
代理商: BLV33
1996 Oct 10
3
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
V
EBO
I
C
I
C(AV)
I
CM
P
tot
P
rf
T
stg
T
j
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
peak collector current
total power dissipation (DC)
RF power dissipation
storage temperature
operating junction temperature
V
BE
= 0
open base
open collector
65
65
33
4
12.5
12.5
20
132
165
+150
200
V
V
V
A
A
A
W
W
°
C
°
C
f > 1 MHz
T
mb
= 25
°
C
f > 1 MHz; T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb(dc)
thermal resistance from junction to
mounting base (DC dissipation)
thermal resistance from junction to
mounting base (RF dissipation)
thermal resistance from mounting
base to heatsink
P
diss
= 80 W; T
mb
= 82
°
C; T
h
= 70
°
C
1.46
K/W
R
th j-mb(rf)
P
diss
= 80 W; T
mb
= 82
°
C; T
h
= 70
°
C
1.17
K/W
R
th mb-h
P
diss
= 80 W; T
mb
= 82
°
C; T
h
= 70
°
C
0.15
K/W
Fig.2 DC SOAR.
(1) T
mb
= 25
°
C.
(2) T
h
= 70
°
C.
(3) Second breakdown limit (independent of temperature).
handbook, halfpage
MGG120
2
10
(1)
1
1
10
10
2
VCE (V)
IC
(A)
(2)
(3)
Fig.3 Power derating curves.
(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.
handbook, halfpage
150
50
100
(2)
(1)
MGG119
0
100
50
Ptot
(W)
Th (
°
C)
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