參數(shù)資料
型號(hào): BLV33
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF linear power transistor(VHF線性功率晶體管)
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-147, 4 PIN
文件頁數(shù): 5/20頁
文件大?。?/td> 130K
代理商: BLV33
1996 Oct 10
5
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Notes
1.
2.
Measured under pulse conditions: t
p
300
μ
s;
δ ≤
0.02.
Measured under pulse conditions: t
p
50
μ
s;
δ ≤
0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
50
0.75
680
MAX.
1
100
UNIT
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
V
CEsat
f
T
collector-emitter breakdown voltage V
BE
= 0; I
C
= 25 mA
collector-emitter breakdown voltage open base; I
C
= 100 mA
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector-emitter saturation voltage
transition frequency
65
33
4
15
V
V
V
mA
open collector; I
E
= 10 mA
V
BE
= 0; V
CE
= 30 V
V
CE
= 25 V; I
C
= 3 A; note 1
I
C
= 6 A; I
B
= 0.6 A; note 1
V
CB
= 25 V; I
E
=
3 A;
f = 100 MHz; note 2
V
CB
= 25 V; I
E
=
6 A;
f = 100 MHz; note 2
V
CB
= 25 V; I
E
= i
e
= 0; f = 1 MHz
I
C
= 100 mA; V
CE
= 25 V;
f = 1 MHz
V
MHz
transition frequency
750
MHz
C
c
C
re
collector capacitance
feedback capacitance
155
88
pF
pF
C
cs
collector-stud capacitance
3
pF
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