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參數(shù)資料
| 型號： | BLS2731-110 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Microwave power transistor(微波功率晶體管) |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, SOT-423A, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 85K |
| 代理商： | BLS2731-110 |
1998 Jan 30
8
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLS2731-150 | TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 12A I(C) | SOT-469A |
| BLS2731-20 | Microwave power transistor(微波功率晶體管) |
| BLS2731-50 | Microwave power transistor(微波功率晶體管) |
| BLS3135-10 | Microwave power transistor(微波功率晶體管) |
| BLS3135-20 | Microwave power transistor(微波功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLS2731-110 TRAY | 功能描述:射頻雙極電源晶體管 BULKTR TNS-MICP RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLS2731-110,114 | 功能描述:射頻雙極電源晶體管 BULKTR TNS-MICP RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLS2731-150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 12A I(C) | SOT-469A |
| BLS2731-20 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Microwave power transistor |
| BLS2731-20 TRAY | 功能描述:射頻雙極電源晶體管 BULKTR TNS-MICL RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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