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參數資料
| 型號： | BLF522 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power MOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-171A, 6 PIN |
| 文件頁數： | 2/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BLF522 |
September 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
FEATURES
High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN
DESCRIPTION
1
2
3
4
5
6
source
source
gate
drain
source
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
halfpage
MBA931 - 1
1
3
5
2
4
6
Top view
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
GP
(dB)
>
10
η
D
(%)
>
50
CW, class-B
500
12.5
5
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