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參數(shù)資料
| 型號(hào)： | BLF277 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, FM-6 |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大小： | 101K |
| 代理商： | BLF277 |
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September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
FEATURES
High power gain
Easy power control
Gold metallization ensures
excellent reliability
Good thermal stability
Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
6-lead, SOT119 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (V
GS
) information is provided
for matched pair applications. Refer
to the ‘General' section for further
information.
PINNING - SOT119
PIN
DESCRIPTION
1
2
3
4
5
6
source
source
gate
drain
source
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
andbook, halfpage
2
4
6
5
3
1
MSB006
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
>
14
η
D
(%)
>
50
CW, class-B
175
50
150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF348 | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| BLF861 | UHF power LDMOS transistor |
| BLT53 | UHF power transistor |
| BLT61 | UHF power transistor |
| BLT82 | UHF power transistor |
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