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參數(shù)資料
| 型號： | BLF2045 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor(UHF 功率 LDMOS晶體管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, FM-2 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BLF2045 |
1999 Dec 06
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
THERMAL CHARACTERISTICS
Note
1.
Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to heatsink
P
tot
= 87.5 W; T
h
= 25
°
C;
note 1
2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 0.7 mA
V
DS
= 10 V; I
D
= 70 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 10 V; I
D
= 2.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 2.5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
65
1.5
9
2
340
38
31
1.7
3.5
5
125
V
V
μ
A
A
nA
S
m
pF
pF
pF
1
10
100
C
(pF)
0
10
20
30
V
DS
(V)
C
iis
C
rss
C
oss
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
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