參數(shù)資料
型號(hào): BLF2045
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor(UHF 功率 LDMOS晶體管)
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, FM-2
文件頁(yè)數(shù): 2/11頁(yè)
文件大?。?/td> 133K
代理商: BLF2045
1999 Dec 06
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation.
APPLICATIONS
Communication transmitter applications (PCN/PCS) in
the 1.8 to 2.2 GHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467C
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
Fig.1 Simplified outline.
1
3
2
Top view
MBK584
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
2-tone, class-AB
f
1
= 2000; f
2
= 2000.1
26
30 (PEP)
>10
>30
25
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
65
±
15
4.5
150
200
V
V
A
°
C
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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