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參數(shù)資料
| 型號： | BLF2022-120 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power LDMOS transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 96K |
| 代理商： | BLF2022-120 |
2000 Dec 12
4
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2022-120
Fig.2
Power gain and drain efficiency as functions of
average load power; typical values.
V
DS
= 28 V; I
= 2 x 500 mA;
f
1
= 2170 MHz; f
2
= 2170.1 MHz;T
h
≤
25
°
C.
0
5
10
15
30
35
40
45
P
L
avg (dBm)
50
G
P
(dB)
0
20
40
60
η
D
(%)
G
P
η
D
0
4
8
12
16
20
25
30
35
40
45
50
P
L
avg (dBm)
G
P
(dB)
-80
-60
-40
-20
0
ACPR
(dBc)
G
P
ACPR
ACPR10
Fig.3
Power gain and adjacent channel power
ratio as functions of average load power;
typical values.
V
DS
= 28 V; I
= 2 x 500 mA;
f
1
= 2140 MHz; f
2
= 2140.1 MHz;T
h
≤
25
°
C.
Input signal: 3GPP W-CDMA 15DPCH
Peak to average ratio: 10.27 dB (0.0001 %)
-80
-60
-40
-20
0
30
35
40
45
50
P
L
avg (dBm)
d
im
(dBc)
d
3
d
7
d
5
V
DS
= 28 V; I
= 2 x 500 mA;
f
1
= 2170 MHz; f
2
= 2170.1 MHz;T
h
≤
25
°
C.
Fig.4
Intermodulation distortion as a function of
average load power; typical values.
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