參數(shù)資料
型號(hào): BLF2022-120
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF push-pull power LDMOS transistor
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 2/7頁
文件大?。?/td> 96K
代理商: BLF2022-120
2000 Dec 12
2
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2022-120
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 2.2 GHz).
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range.
DESCRIPTION
Push-pull silicon N-channel enhancement mode lateral
D-MOS transistor encapsulated in a 4-lead flange package
(SOT539A) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT539A
PIN
DESCRIPTION
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source connected to flange
5
1
2
4
3
Top view
MBK880
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
2-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
120 (PEP)
>11
>30
25
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
65
±
15
18
+
150
200
V
V
A
°
C
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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