參數(shù)資料
型號: BFG10X
廠商: NXP Semiconductors N.V.
英文描述: UHF power transistor
中文描述: 超高頻大功率晶體管
文件頁數(shù): 7/9頁
文件大?。?/td> 58K
代理商: BFG10X
1995 Sep 22
7
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components
(see Fig.7)
Notes
1.
2.
3.
V
BE
at 1 mA must be 0.65 V.
American Technical Ceramics type 100A or capacitor of same quality.
Resonant at 1900 MHz.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
TR1
C1, C6, C7, C8
C2
C3
C4
C5
C9, C10
L1, L2
R1, R2
R3, R4
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
capacitor; note 2
capacitor; note 2
capacitor; note 2
Philips capacitor
RF choke, Philips
metal film resistor
metal film resistor
note 1
24 pF
0.4 pF
2.4 pF
0.5 pF
1.2 pF
1500
μ
F, 10 V
2222 032 14152
4330 030 36301
75
10
Fig.7 Class-AB test circuit at f = 1.9 GHz.
handbook, full pagewidth
MBG429
DUT
+
Vbias
R1
R2
L1
C7
C1
C2
C3
C4
C5
C6
C8
C9
L2
C10
TR1
+
VCC
PCB RT5880, thickness 0.79 mm.
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