參數(shù)資料
型號: BFG10X
廠商: NXP Semiconductors N.V.
英文描述: UHF power transistor
中文描述: 超高頻大功率晶體管
文件頁數(shù): 6/9頁
文件大?。?/td> 58K
代理商: BFG10X
1995 Sep 22
6
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components
(see Fig.6)
Notes
1.
2.
3.
V
BE
at 1 mA must be 0.65 V.
American Technical Ceramics type 100A or capacitor of same quality.
Resonant at 1900 MHz.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
TR1
C1, C4, C7
C2
C3
C5
C6
C8
C9
L1
L4
L2, L3
R1
R2
R3
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
capacitor; note 2
capacitor; note 2
capacitor; note 2
Philips multilayer capacitor
Philips capacitor
6 turns enamelled 0.7 mm copper wire
2 turns enamelled 0.7 mm copper wire
RF choke, Philips
metal film resistor
metal film resistor
metal film resistor
note 1
120 pF
6.8 pF
0.5 pF
1.2 pF
1.9 pF
1 nF, 10 V
1500
μ
F, 10 V
2222 032 14152
length 3.5 mm
length 3 mm
4312 020 36690
275
100
10
Fig.6 Class-AB test circuit at f = 900 MHz.
handbook, full pagewidth
MBG428
DUT
+Vbias
+VCC
R1
R2
R3
TR1
C8
C1
C2
C3
C5
C4
C6
C7
C9
L2
L3
L4
L1
PCB RT5880, thickness 0.79 mm.
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