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參數(shù)資料
| 型號： | BFG10X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BFG10X |
1995 Sep 22
5
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
APPLICATION INFORMATION
RF performance at T
amb
= 25
°
C in a common-emitter test circuit.
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; t
p
= 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; t
p
= 10 ms; duty cycle of 1 : 2.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(mW)
G
p
(dB)
η
c
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; t
p
= 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; t
p
= 5 ms
1.9
0.9
3.6
6
200
650
≥
5; typ. 7
≥
10
≥
12.5
≥
50; typ. 60
≥
50
≥
50
0.9
6
360
Pulsed, class-AB operation.
V
CE
= 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for P
L
= 200 mW.
Fig.4
Power gain and efficiency as functions
of load power; typical values.
handbook, halfpage
(dB)
0
500
0
2
MLC820
4
6
8
100
0
20
40
60
80
100
200
300
400
Gp
PL
c
(%)
η
c
η
Fig.5
Power gain and efficiency as functions
of load power; typical values.
Pulsed, class-AB operation.
V
CE
= 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 600 mW.
handbook, halfpage
(dB)
0.3
0
MBG194
4
8
12
80
20
20
40
60
0.5
0.7
0.9
1.1
Gp
PL
c
(%)
η
c
η
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