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參數(shù)資料
| 型號： | BF556C |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | JFETs |
| 英文描述： | N-channel FET |
| 封裝： | BF556C<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 118K |
| 代理商： | BF556C |
BF556A_BF556B_BF556C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
7 of 14
NXP Semiconductors
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
BF556C
(1) V
GS
= 0 V.
(2) V
GS
=
1.0 V.
(3) V
GS
=
2.0 V.
(4) V
GS
=
3.0 V.
(5) V
GS
=
4.0 V.
(6) V
GS
=
5.0 V.
Fig 8.
Typical output characteristics.
V
DS
= 15 V.
(1) BF556C.
(2) BF556B.
(3) BF556A.
Fig 9.
Typical input characteristics.
V
DS
= 15 V.
(1) BF556C.
(2) BF556B.
I
D
= 10 mA only for BF556B and BF556C.
(1) I
D
= 10 mA.
(2) I
D
= 1 mA.
(3) I
D
= 0.1 mA.
(4) I
GSS
.
Fig 11. Gate current as a function of drain-gate
voltage; typical values.
Fig 10. Drain current as a function of gate-source
voltage; typical values.
V
DS
(V)
0
16
12
4
8
mrc147
10
15
5
20
25
I
D
(mA)
0
(1)
(2)
(3)
(6)
(5)
(4)
V
GS
(V)
6
0
2
4
mrc148
10
20
30
I
D
(mA)
0
(2)
(3)
(1)
mrc149
1
10
2
10
1
10
2
10
10
3
I
D
(
μ
A)
10
3
V
GS
(V)
8
0
2
6
4
(1)
(3)
(2)
mrc151
10
1
1
10
10
2
I
G
(pA)
10
2
V
DG
(V)
0
20
16
8
12
4
(3)
(4)
(2)
(1)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF556C T/R | 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| BF556C,215 | 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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