- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378411 > BF1218 (NXP SEMICONDUCTORS) Dual N-channel dual-gate MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | BF1218 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件頁數(shù)： | 9/23頁 |
| 文件大?。?/td> | 672K |
| 代理商： | BF1218 |
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
9 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f = 50 MHz;
T
amb
= 25
C; see
Figure 33
.
Fig 12. Amplifier A: drain current as a function of gain
reduction; typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA
Fig 13. Amplifier A: input admittance as a function of
frequency; typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA
Fig 14. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical
values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA
Fig 15. Amplifier A: reverse transfer admittance and
phase as a function of frequency; typical
values
gain reduction (dB)
0
50
40
20
30
10
001aac197
12
20
28
I
D
(mA)
4
001aaa564
f (MHz)
10
10
3
10
2
10
1
1
10
10
2
b
is
, g
is
(mS)
10
2
b
is
g
is
001aag358
10
1
10
2
Y
fs
(mS)
10
1
10
1
10
2
fs
(deg)
10
1
10
3
f (MHz)
10
10
2
Y
fs
fs
001aaa566
10
2
10
10
3
y
rs
(mS)
1
10
2
10
10
3
rs
(deg)
1
f (MHz)
10
10
3
10
2
y
rs
rs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF245A | N-channel FET |
| BF245B | N-channel FET |
| BF245C | N-channel FET |
| BF510 | N-channel silicon FET |
| BF511 | N-channel silicon FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1218,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-1218-31SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1218-31SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1222-19SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1225 | 功能描述:EMI/RFI 抑制器及鐵氧體 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。