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參數(shù)資料
| 型號： | BF1218 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件頁數(shù)： | 4/23頁 |
| 文件大小： | 672K |
| 代理商： | BF1218 |
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
4 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
6. Thermal characteristics
7. Static characteristics
[1]
R
G1
connects gate1 (B) to V
GG
= 0 V (see
Figure 3
).
R
G1
connects gate1 (B) to V
GG
= 5 V (see
Figure 3
).
[2]
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
225
Unit
K/W
Table 7.
T
j
= 25
C; unless otherwise specified.
Symbol
Parameter
Per MOSFET; unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
Static characteristics
Conditions
Min
Typ
Max Unit
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
amplifier A
amplifier B
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS(B)
= 5 V; R
G1
= 86 k
amplifier A; V
DS(A)
= 5 V
amplifier B
V
G2-S
= V
DS(A)
= 0 V
amplifier A; V
G1-S(A)
= 5 V; I
D(B)
= 0 A
amplifier B; V
G1-S(B)
= 5 V; V
DS(B)
= 0 V
V
G2-S
= 4 V; V
G1-S(B)
= 0 V;
V
G1-S(A)
= V
DS(A)
= V
DS(B)
= 0 V
6
6
6
6
0.5
0.5
0.3
0.4
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
V
V
V
V
V
V
V
V
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DS
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
[1]
14
-
-
24
20
mA
mA
[2]
10
I
G1-S
gate1 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate2 cut-off current
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相關代理商/技術參數(shù) |
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|---|---|
| BF1218,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-1218-31SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1218-31SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1222-19SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1225 | 功能描述:EMI/RFI 抑制器及鐵氧體 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 產品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
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