參數(shù)資料
型號(hào): BF1218
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: Dual N-channel dual-gate MOSFET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SC-88, 6 PIN
文件頁(yè)數(shù): 10/23頁(yè)
文件大小: 672K
代理商: BF1218
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
10 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
8.1.2
Scattering parameters for amplifier A
8.1.3
Noise data for amplifier A
Table 10.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
C; typical values;
unless otherwise specified.
f (MHz)
NF
min
(dB)
opt
(ratio)
400
0.9
0.77
800
1.1
0.73
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V; I
D(A)
= 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
001aag360
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
Table 9.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
C; typical values.
F
(MHz)
Magnitude
(ratio)
(degree)
(ratio)
40
0.9927
4.10
3.1833
100
0.9897
7.68
3.1743
200
0.9852
15.36
3.1494
300
0.9758
22.84
3.1146
400
0.9655
30.19
3.0718
500
0.9513
37.55
3.0156
600
0.9341
44.85
2.9482
700
0.9160
51.99
2.8755
800
0.8964
58.99
2.8003
900
0.8737
65.84
2.7206
1000
0.8499
72.51
2.6352
Scattering parameters for amplifier A
s
11
s
21
Magnitude
s
12
Magnitude
(ratio)
0.0006
0.0011
0.0023
0.0033
0.0042
0.0049
0.0056
0.0061
0.0064
0.0066
0.0067
s
22
Magnitude
(ratio)
0.9927
0.9923
0.9912
0.9904
0.9890
0.9874
0.9853
0.9832
0.9806
0.9793
0.9776
Angle
Angle
(degree)
175.69
171.77
163.56
155.46
147.53
139.61
131.74
124.04
116.41
108.93
101.62
Angle
(degree)
92.99
81.72
79.23
74.65
70.46
66.38
62.22
58.44
54.48
50.78
46.49
Angle
(degree)
1.24
2.54
5.09
7.60
10.10
12.60
15.11
17.61
20.12
22.57
25.05
Noise data for amplifier A
r
n
(ratio)
(degree)
22.7
45.75
0.65
0.62
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