參數(shù)資料
型號： BF1214
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1214<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr
文件頁數(shù)： 4/18頁
文件大?。?/td> 211K
代理商： BF1214
BF1214_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2007
4 of 18
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
6.
Thermal characteristics
7.
Static characteristics
[1]
R
G1
connects gate1 to V
GG
= 5 V.
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
240
Unit
K/W
Table 7.
T
j
= 25
°
C.
Symbol
Per MOSFET; unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
Static characteristics
Parameter
Conditions
Min
Typ Max Unit
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
μ
A
amplifier A
amplifier B
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
μ
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
μ
A
V
G2-S
= 4 V
amplifier A; V
DS(A)
= 5 V; R
G1(A)
= 68 k
amplifier B; V
DS(B)
= 5 V; R
G1(B)
= 68 k
V
G2-S
= 0 V; V
DS(A)
= V
DS(B)
= 0 V
amplifier A; V
G1-S(A)
= 5 V
amplifier B; V
G1-S(B)
= 5 V
V
G2-S
= 4 V; V
DS(A)
= V
DS(B)
= 0 V;
V
G1-S(A)
= V
G1-S(B)
= 0 V
6
6
6
6
0.5
0.5
0.3
0.4
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
V
V
V
V
V
V
V
V
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DS
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
[1]
13
13
-
-
23
23
mA
mA
I
G1-S
gate1 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate2 cut-off current
相關(guān)PDF資料
PDF描述
BF1214 Dual N-channel dual-gate MOSFET
BF1215 Dual N-channel dual-gate MOSFET
BF1216 Dual N-channel dual-gate MOSFET
BF1217WR N-channel dual-gate MOSFET
BF1218 Dual N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1214 T/R 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1214,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1214/L,115 制造商:NXP Semiconductors 功能描述:- Tape and Reel
BF-1214-07SV-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF1215,115 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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