參數(shù)資料
型號: BF1211
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF1211<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁數(shù): 4/16頁
文件大?。?/td> 415K
代理商: BF1211
2003 Dec 16
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
(mW)
0
50
100
200
0
200
150
150
100
50
MDB828
(2)
(1)
Ts (
°
C)
Fig.4 Power derating curve.
(1) BF1211WR.
(2) BF1211; BF1211R.
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
R
G1
connects G
1
to V
GG
= 5 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
10
10
1.5
1.5
1
1
19
UNIT
V
(BR)DSS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(F)S-G1
forward source-gate 1 voltage
V
(F)S-G2
forward source-gate 2 voltage
V
G1-S(th)
gate 1-source threshold voltage
V
G2-S(th)
gate 2-source threshold voltage
I
DSX
drain-source current
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 100
A
V
G1-S
= 5 V; V
DS
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 75 k
;
note 1
V
G2-S
= V
DS
= 0 V; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0 V; V
G2-S
= 4 V
6
6
6
0.5
0.5
0.3
0.35
11
V
V
V
V
V
V
V
mA
I
G1-S
I
G2-S
gate 1 cut-off current
gate 2 cut-off current
50
20
nA
nA
相關PDF資料
PDF描述
BF1211 N-channel dual-gate MOSFET
BF1211R N-channel dual-gate MOSFET
BF1211WR N-channel dual-gate MOSFET
BF1211R N-channel dual-gate MOSFET
BF1211WR N-channel dual-gate MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
BF1211,215 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1211R 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1211R,215 功能描述:射頻MOSFET電源晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BF1211WR 功能描述:MOSFET TAPE-7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BF1211WR,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel