- 您現(xiàn)在的位置：買賣IC網 > PDF目錄378411 > BF1205 (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF資料下載
參數(shù)資料
| 型號： | BF1205 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件頁數(shù)： | 5/25頁 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
5
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
handbook, halfpage
ID
(mA)
0
VGG (V)
5
12
4
0
8
2
3
1
4
MGX430
(1)
(2)
(3)
(4)
(5)
(6)
Fig.3 Drain currents of MOS-FET a and b as
functions of V
GG
(see Fig.4).
(1) I
D
(b); R
G1
= 120 k
.
(2) I
D
(b); R
G1
= 150 k
.
(3) I
D
(b); R
G1
= 180 k
.
(4) I
D
(a); R
G1
= 180 k
.
(5) I
D
(a); R
G1
= 150 k
.
(6) I
D
(a); R
G1
= 120 k
.
handbook, halfpage
MGX431
VGG
RG1
d (a)
s
d (b)
g1 (a)
g2
g1 (b)
Fig.4 Functional diagram
V
GG
= 5 V: amplifier a is OFF; amplifier b is ON.
V
GG
= 0 V: amplifier a is ON; amplifier b is OFF.
相關PDF資料 |
PDF描述 |
|---|---|
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF1205,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1205,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。