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參數資料
| 型號： | BF1108R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Silicon RF switches |
| 封裝： | BF1108R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF1108R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47 |
| 文件頁數： | 8/10頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BF1108R |
BF1108_BF1108R_4
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 29 May 2008
8 of 10
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
10. Abbreviations
11. Revision history
Table 9.
Acronym
AQL
MOSFET
RF
S4
VCR
Abbreviations
Description
Acceptable Quality Level
Metal-Oxide Semiconductor Field-Effect Transistor
Radio Frequency
Special inspection level 4
VideoCassette Recorder
Table 10.
Document ID
BF1108_BF1108R_4
Modifications:
Revision history
Release date
20080529
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Symbol notation has been adapted to comply with the current guidelines of NXP
Semiconductors.
19991118
Product data sheet
Data sheet status
Product data sheet
Change notice Supersedes
-
BF1108_1108R_3
BF1108_1108R_3
(9397 750 06477)
BF1108_1108R_2
(9397 750 06073)
BF1108_1108R_1
(9397 750 05899)
-
BF1108_1108R_2
19990819
Product data sheet
-
BF1108_1108R_1
19990517
Preliminary specification
-
-
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|---|---|
| BF1109 | N-channel dual-gate MOSFET |
| BF1109 | N-channel dual-gate MOSFET |
| BF1109R | N-channel dual-gate MOSFET |
| BF1109WR | N-channel dual-gate MOSFET |
| BF1109R | N-channel dual-gate MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BF1108R T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1108R,215 | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1108R,235 | 功能描述:射頻MOSFET小信號晶體管 Single N-CH 7V 10mA 4 LEADS, REVERSE PIN RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1108R215 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1109 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
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