參數(shù)資料
型號： BF1108R
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： Silicon RF switches
封裝： BF1108R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF1108R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47
文件頁數(shù)： 4/10頁
文件大小： 64K
代理商： BF1108R
BF1108_BF1108R_4
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 29 May 2008
4 of 10
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
8.
Dynamic characteristics
[1]
I
F
= diode forward current.
C
i
is the series connection of C
GS
and C
GK
; C
o
is the series connection of C
GD
and C
GK
.
Guaranteed on AQL basis; inspection level S4, AQL 1.0.
[2]
[3]
Table 8.
Common cathode; T
amb
= 25
°
C.
Symbol Parameter
FET and diode
L
ins(on)
on-state insertion loss
Dynamic characteristics
Conditions
Min
Typ
Max
Unit
V
SK
= V
DK
= 0 V; I
F
= 0 mA
R
S
= R
L
= 50
; f
≤
1 GHz
R
S
= R
L
= 50
; f = 1 GHz
R
S
= R
L
= 75
; f
≤
1 GHz
V
SK
= V
DK
= 5 V; I
F
= 1 mA
R
S
= R
L
= 50
; f
≤
1 GHz
R
S
= R
L
= 50
; f = 1 GHz
R
S
= R
L
= 75
; f
≤
1 GHz
V
KS
= 0 V; I
D
= 1 mA
[1]
-
-
-
-
1.3
-
2
-
3
dB
dB
dB
ISL
off
off-state isolation
30
-
30
-
-
38
-
12
-
-
-
20
dB
dB
dB
R
DSon
drain-source on-state
resistance
input capacitance
C
i
f = 1 MHz
V
SK
= V
DK
= 5 V; I
F
= 1 mA
V
SK
= V
DK
= 0 V; I
F
= 0 mA
f = 1 MHz
V
SK
= V
DK
= 5 V; I
F
= 1 mA
V
SK
= V
DK
= 0 V; I
F
= 0 mA
[2]
-
-
1
0.65
-
0.9
pF
pF
C
o
output capacitance
[2]
-
-
1
0.65
-
0.9
pF
pF
Diode
C
d
r
D
diode capacitance
diode forward resistance
f = 1 MHz; V
R
= 0 V
I
F
= 2 mA; f = 100 MHz
-
1.1
-
-
0.7
pF
[3]
-
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