參數(shù)資料
型號： BF1107
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： MOSFET N-channel switching transistor
封裝： BF1107<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF1107<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF1107
文件頁數(shù)： 7/8頁
文件大?。?/td> 53K
代理商： BF1107
BF1107_4
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
7 of 8
NXP Semiconductors
BF1107
N-channel single gate MOSFET
12. Legal information
12.1
Data sheet status
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
.
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BF1107 MOSFET N-channel switching transistor
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BF1108R Silicon RF switches
相關代理商/技術參數(shù)
參數(shù)描述
BF1107,215 功能描述:射頻MOSFET小信號晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107,235 功能描述:射頻MOSFET小信號晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel single gate MOS-FETs
BF1108 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon RF switches
BF1108,215 功能描述:射頻MOSFET小信號晶體管 Single N-CH 7V 10mA 4 LEADS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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