參數(shù)資料
型號: BF1107
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: MOSFET N-channel switching transistor
封裝: BF1107<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF1107<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF1107
文件頁數(shù): 4/8頁
文件大小: 53K
代理商: BF1107
BF1107_4
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
4 of 8
NXP Semiconductors
BF1107
N-channel single gate MOSFET
(1) R
S
= R
L
= 50
(2) R
S
= R
L
= 75
V
SG
= V
DG
= 0 V
Fig 1.
On-state insertion loss as a function of
frequency; typical values
(1) R
S
= R
L
= 50
(2) R
S
= R
L
= 75
V
SG
= V
DG
= 5 V
Fig 2.
Off-state isolation as a function of frequency;
typical values
(1) R
S
= R
L
= 50
(2) R
S
= R
L
= 75
V
SG
= V
DG
= 0 V
Fig 3.
Input and output return loss (on-state) as a function of frequency; typical values
001aaf760
3
2
4
1
0
L
ins(on)
(dB)
5
f (MHz)
10
10
3
10
2
(2)
(1)
001aaf780
40
20
0
ISL
off
(dB)
60
f (MHz)
10
10
3
10
2
(2)
(1)
001aaf781
f (MHz)
10
10
3
10
2
15
10
20
5
0
25
RL
in
; RL
out
(dB)
(2)
(1)
相關(guān)PDF資料
PDF描述
BF1107 MOSFET N-channel switching transistor
BF1108 Silicon RF switches
BF1108 Silicon RF switches
BF1108R Silicon RF switches
BF1108R Silicon RF switches
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1107,215 功能描述:射頻MOSFET小信號晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107,235 功能描述:射頻MOSFET小信號晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel single gate MOS-FETs
BF1108 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon RF switches
BF1108,215 功能描述:射頻MOSFET小信號晶體管 Single N-CH 7V 10mA 4 LEADS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel