參數(shù)資料
型號(hào)： BF1107
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： MOSFET N-channel switching transistor
封裝： BF1107<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BF1107<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁數(shù)： 1/8頁
文件大?。?/td> 53K
代理商： BF1107
1.
Product profile
1.1 General description
The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.
1.2 Features
I
Currentless RF switch
1.3 Applications
I
Various RF switching applications such as:
N
Passive loop through for VCR tuner
N
Transceiver switching
1.4 Quick reference data
BF1107
N-channel single gate MOSFET
Rev. 04 — 9 January 2007
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1.
Symbol
L
ins(on)
Quick reference data
Parameter
on-state insertion loss V
SG
= V
DG
= 0 V;
Conditions
Min
Typ
Max
Unit
f = 50 MHz to 860 MHz
R
S
= R
L
= 50
R
S
= R
L
= 75
V
SG
= V
DG
= 5 V;
f = 50 MHz to 860 MHz
R
S
= R
L
= 50
R
S
= R
L
= 75
V
GS
= 0 V; I
D
= 1 mA
-
-
-
-
2.5
3.5
dB
dB
ISL
off
off-state isolation
30
30
-
-
-
12
-
-
20
dB
dB
R
DSon
drain-source on-state
resistance
gate-source pinch-off
voltage
V
GS(p)
V
DS
= 1 V; I
D
= 20
μ
A
-
3
4.5
V
相關(guān)PDF資料
PDF描述
BF1108 Silicon RF switches
BF1108 Silicon RF switches
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BF1108R Silicon RF switches
BF1109 N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1107,215 功能描述:射頻MOSFET小信號(hào)晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107,235 功能描述:射頻MOSFET小信號(hào)晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel single gate MOS-FETs
BF1108 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon RF switches
BF1108,215 功能描述:射頻MOSFET小信號(hào)晶體管 Single N-CH 7V 10mA 4 LEADS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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