- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378410 > BF1108R (NXP Semiconductors N.V.) Silicon RF switches PDF資料下載
參數(shù)資料
| 型號： | BF1108R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon RF switches |
| 封裝： | BF1108R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF1108R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BF1108R |
1.
Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
1.2 Features
I
Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
I
Various RF switching applications such as:
N
Passive loop through for VCR tuner
N
Transceiver switching
1.4 Quick reference data
[1]
I
F
= diode forward current.
BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1.
Symbol
L
ins(on)
Quick reference data
Parameter
on-state insertion loss R
S
= R
L
= 50
; f
≤
1 GHz;
V
SK
= V
DK
= 0 V; I
F
= 0 mA
off-state isolation
R
S
= R
L
= 50
; f
≤
1 GHz;
V
SK
= V
DK
= 5 V; I
F
= 1 mA
drain-source on-state
resistance
gate-source pinch-off
voltage
Conditions
Min
Typ
-
Max
2
Unit
dB
[1]
-
ISL
off
30
-
-
dB
R
DSon
V
KS
= 0 V; I
D
= 1 mA
-
12
20
V
GS(p)
V
DS
= 1 V; I
D
= 20
μ
A
-
3
4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF1108R | Silicon RF switches |
| BF1109 | N-channel dual-gate MOSFET |
| BF1109 | N-channel dual-gate MOSFET |
| BF1109R | N-channel dual-gate MOSFET |
| BF1109WR | N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1108R T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1108R,215 | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1108R,235 | 功能描述:射頻MOSFET小信號晶體管 Single N-CH 7V 10mA 4 LEADS, REVERSE PIN RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1108R215 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1109 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。