參數(shù)資料
型號： BF1100WR
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1100WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;
文件頁數(shù)： 4/14頁
文件大小： 100K
代理商： BF1100WR
1995 Apr 25
4
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on a printed-circuit board.
T
s
is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Notes
1.
2.
R
G1
connects gate 1 to V
GG
= 9 V; see Fig.26.
R
G1
connects gate 1 to V
GG
= 12 V; see Fig.26.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
T
s
= 91
°
C; note 2
350
210
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
V
G2-S
= V
DS
= 0; I
G1-S
= 1 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 1 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 9 V;
I
D
= 20
μ
A
V
G2-S
= 4 V; V
DS
= 12 V;
I
D
= 20
μ
A
V
G1-S
= 4 V; V
DS
= 9 V;
I
D
= 20
μ
A
V
G1-S
= 4 V; V
DS
= 12 V;
I
D
= 20
μ
A
V
G2-S
= 4 V; V
DS
= 9 V;
R
G1
= 180 k
; note 1
V
G2-S
= 4 V; V
DS
= 12 V;
R
G1
= 250 k
; note 2
V
G2-S
= V
DS
= 0; V
G1-S
= 12 V
V
G1-S
= V
DS
= 0; V
G2-S
= 12 V
13.2
13.2
0.5
0.5
0.3
20
20
1.5
1.5
1
V
V
V
V
V
0.3
1
V
V
G2-S(th)
gate 2-source threshold voltage
0.3
1.2
V
0.3
1.2
V
I
DSX
drain-source current
8
13
mA
8
13
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
50
nA
nA
相關(guān)PDF資料
PDF描述
BF1100WR N-channel dual-gate MOSFET
BF1100 N-channel dual-gate MOSFET
BF1100 N-channel dual-gate MOSFET
BF1100R N-channel dual-gate MOSFET
BF1100R N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1100WR,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1101,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1101R,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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