參數(shù)資料
型號: BF1100
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: N-channel dual-gate MOSFET
封裝: BF1100<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁數(shù): 3/15頁
文件大?。?/td> 311K
代理商: BF1100
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
I
G1
I
G2
P
tot
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
BF1100
BF1100R
storage temperature
operating junction temperature
14
30
±
10
±
10
V
mA
mA
mA
see Fig.3
up to T
amb
= 50
°
C; note 1
up to T
amb
= 40
°
C; note 1
65
200
200
+150
+150
mW
mW
°
C
°
C
T
stg
T
j
Fig.3 Power derating curves.
handbook, halfpage
(mW)
0
50
100
200
0
200
MLD155
150
150
100
50
amb
o
BF1100R
BF1100
Fig.4
Forward transfer admittance as a function
of junction temperature; typical values.
50
0
50
150
40
0
MLD156
100
30
20
10
Yfs
(mS)
Tj
o
Rev. 02 - 13 November 2007
3 of 15
相關(guān)PDF資料
PDF描述
BF1100R N-channel dual-gate MOSFET
BF1100R N-channel dual-gate MOSFET
BF1101 N-channel dual-gate MOSFET
BF1101 N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1100,215 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1100/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual-Gate MOS-FETs
BF1100/WR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual-Gate MOS-FETs
BF1100R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual-gate MOS-FETs
BF1100R,215 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel