- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369434 > BCR3AS-8 Thyristor Product Catalog PDF資料下載
參數(shù)資料
| 型號(hào)： | BCR3AS-8 |
| 英文描述： | Thyristor Product Catalog |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁(yè)數(shù)： | 128/224頁(yè) |
| 文件大?。?/td> | 2697K |
| 代理商： | BCR3AS-8 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)當(dāng)前第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)第161頁(yè)第162頁(yè)第163頁(yè)第164頁(yè)第165頁(yè)第166頁(yè)第167頁(yè)第168頁(yè)第169頁(yè)第170頁(yè)第171頁(yè)第172頁(yè)第173頁(yè)第174頁(yè)第175頁(yè)第176頁(yè)第177頁(yè)第178頁(yè)第179頁(yè)第180頁(yè)第181頁(yè)第182頁(yè)第183頁(yè)第184頁(yè)第185頁(yè)第186頁(yè)第187頁(yè)第188頁(yè)第189頁(yè)第190頁(yè)第191頁(yè)第192頁(yè)第193頁(yè)第194頁(yè)第195頁(yè)第196頁(yè)第197頁(yè)第198頁(yè)第199頁(yè)第200頁(yè)第201頁(yè)第202頁(yè)第203頁(yè)第204頁(yè)第205頁(yè)第206頁(yè)第207頁(yè)第208頁(yè)第209頁(yè)第210頁(yè)第211頁(yè)第212頁(yè)第213頁(yè)第214頁(yè)第215頁(yè)第216頁(yè)第217頁(yè)第218頁(yè)第219頁(yè)第220頁(yè)第221頁(yè)第222頁(yè)第223頁(yè)第224頁(yè)
AN1002
Application Notes
http://www.teccor.com
+1 972-580-7777
AN1002 - 2
2002 Teccor Electronics
Thyristor Product Catalog
Triacs can be gated on in one of four basic gating modes as
shown in Figure AN1002.3. The most common quadrants for
gating on triacs are Quadrants I and III, where the gate supply is
synchronized with the main terminal supply (gate positive — MT2
positive, gate negative — MT2 negative). Optimum triac gate
sensitivity is achieved when operating in Quadrants I and III due
to the inherent thyristor chip construction. If Quadrants I and III
cannot be used, the next best operating modes are Quadrants II
and III where the gate supply has a negative polarity with an AC
main terminal supply. Typically, Quadrant II is approximately
equal in gate sensitivity to Quadrant I; however, latching current
sensitivity in Quadrant II is lowest. Therefore, it is difficult for
triacs to latch on in Quadrant II when the main terminal current
supply is very low in value.
Special consideration should be given to gating circuit design
when Quadrants I and IV are used in actual application, because
Quadrant IV has the lowest gate sensitivity of all four operating
quadrants.
Figure AN1002.3
Definition of Operating Quadrants in Triacs
The following table shows the relationships between different
gating modes in current required to gate on triacs.
Example of 4 A triac:
If I
GT
(I) = 10 mA, then
I
GT
(II) = 16 mA
I
GT
(III) = 25 mA
I
GT
(IV) = 27 mA
Gate trigger current is temperature-dependent as shown in
Figure AN1002.4. Thyristors become less sensitive with
decreasing temperature and more sensitive with increasing
temperature.
Figure AN1002.4
Typical DC Gate Trigger Current versus Case
Temperature
For applications where low temperatures are expected, gate cur-
rent supply should be increased to at least two to eight times the
gate trigger current requirements at 25
°
C. The actual factor var-
ies by thyristor type and the environmental temperature.
Example of a 10 A triac:
If I
GT
(I) = 10 mA at 25 °C, then
I
GT
(I) = 20 mA at -40 °C
In applications where high di/dt, high surge, and fast turn-on are
expected, gate drive current should be steep rising (1 μs rise
time) and at least twice rated I
GT
or higher with minimum 3 μs
pulse duration. However, if gate drive current magnitude is very
high, then duration may have to be limited to keep from over-
stressing (exceeding the power dissipation limit of) gate junction.
Latching Current of SCRs and Triacs
Latching current (I
) is the minimum principal current required to
maintain the thyristor in the on state immediately after the switch-
ing from off state to on state has occurred and the triggering sig-
nal has been removed. Latching current can best be understood
by relating to the “pick-up” or “pull-in” level of a mechanical relay.
Figure AN1002.5 and Figure AN1002.6 illustrate typical thyristor
latching phenomenon.
In the illustrations in Figure AN1002.5, the thyristor does not stay
on after gate drive is removed due to insufficient available princi-
pal current (which is lower than the latching current requirement).
Figure AN1002.5
Latching Characteristic of Thyristor (Device Not
Latched)
In the illustration in Figure AN1002.6 the device stays on for the
remainder of the half cycle until the principal current falls below
the holding current level. Figure AN1002.5 shows the character-
istics of the same device if gate drive is removed or shortened
before latching current requirement has been met.
Typical Ratio of
at 25 °C
Type
4 A Triac
10 A Triac
Operating Mode
Quadrant II
1.6
Quadrant I
1
Quadrant III
2.5
Quadrant IV
2.7
1
1.5
1.4
3.1
MT2 POSITIVE
(Positive Half Cycle)
MT2 NEGATIVE
(Negative Half Cycle)
MT1
MT2
+
I
GT
REF
QII
QIII
MT1
I
GATE
MT2
REF
MT1
MT2
REF
MT1
MT2
REF
QI
QIV
ALL POLARITIES ARE REFERENCED TO MT1
(
-
)
I
GATE
(+)
I
GT
-
I
GATE
(
-
)
I
GATE
(+)
NOTE: Alternistors will not operate in Q IV
)
)
IGTIGTQuadrant 1
2.0
1.5
1.0
.5
0
-40
-15
+25
+65
+100
Case Temperature (TC) – C
R
I
I
Gate Pulse
(Gate Drive to Thyristor)
Principal
Current
Through
Thyristor
Latching
Current
Requirement
Time
Zero
Crossing Point
Time
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCR3KM14L | TRIAC|700V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM14R | TRIAC|700V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM8 | TRIAC|400V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM-8 | BCR3KM-8 BCR3KM-12 Datasheet 382K/MAR.20.03 |
| BCR3PM-12 | FUSEHOLDER 3AG SHOCKSAFE FLIPTOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCR3FM-12LB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
| BCR3FM-12LB#BB0 | 功能描述:TRIAC 600V 3A 制造商:renesas electronics america 系列:- 包裝:管件 零件狀態(tài):有效 三端雙向可控硅類型:標(biāo)準(zhǔn) 電壓 - 斷態(tài):600V 電流 - 通態(tài)（It（RMS））（最大值）:3A 電壓 - 柵極觸發(fā)（Vgt）（最大值）:1.5V 電流 - 不重復(fù)浪涌 50，60Hz（Itsm）:30A @ 60Hz 電流 - 柵極觸發(fā)（Igt）（最大值）:20mA 電流 - 保持（Ih）（最大值）:- 配置:單一 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商器件封裝:TO-220FP 標(biāo)準(zhǔn)包裝:1 |
| BCR3FM-12LB-A8BB0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
| BCR3FM-12LBBB0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
| BCR3FM-12RB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。