- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369434 > BCR3AS-8 Thyristor Product Catalog PDF資料下載
參數(shù)資料
| 型號： | BCR3AS-8 |
| 英文描述： | Thyristor Product Catalog |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁數(shù)： | 125/224頁 |
| 文件大?。?/td> | 2697K |
| 代理商： | BCR3AS-8 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁當(dāng)前第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁第161頁第162頁第163頁第164頁第165頁第166頁第167頁第168頁第169頁第170頁第171頁第172頁第173頁第174頁第175頁第176頁第177頁第178頁第179頁第180頁第181頁第182頁第183頁第184頁第185頁第186頁第187頁第188頁第189頁第190頁第191頁第192頁第193頁第194頁第195頁第196頁第197頁第198頁第199頁第200頁第201頁第202頁第203頁第204頁第205頁第206頁第207頁第208頁第209頁第210頁第211頁第212頁第213頁第214頁第215頁第216頁第217頁第218頁第219頁第220頁第221頁第222頁第223頁第224頁
Application Notes
AN1001
2002 Teccor Electronics
Thyristor Product Catalog
AN1001 - 5
http://www.teccor.com
+1 972-580-7777
When voltage is impressed suddenly across a PN junction, a
charging current flows, equal to:
When
becomes greater or equal to thyristor I
GT
,
the thyristor switches on. Normally, this type of turn-on does not
damage the device, providing the surge current is limited.
Generally, thyristor application circuits are designed with static
dv/dt snubber networks if fast-rising voltages are anticipated.
Voltage Breakover Turn-on
This method is used to switch on sidacs and diacs. However,
exceeding voltage breakover of SCRs and triacs is definitely not
recommended as a turn-on method.
In the case of SCRs and triacs, leakage current increases until it
exceeds the gate current required to turn on these gated thyris-
tors in a small localized point. When turn-on occurs by this
method, localized heating in a small area may melt the silicon or
damage the device if di/dt of the increasing current is not suffi-
ciently limited.
Diacs used in typical phase control circuits are basically pro-
tected against excessive current at breakover as long as the fir-
ing capacitor is not excessively large. When diacs are used in a
zener function, current limiting is necessary.
Sidacs are typically pulse-firing, high-voltage transformers and
are current limited by the transformer primary. The sidac should
be operated so peak current amplitude, current duration, and
di/dt limits are not exceeded.
Triac Gating Modes Of Operation
Triacs can be gated in four basic gating modes as shown in
Figure AN1001.17.
Figure AN1001.17
Gating Modes
The most common quadrants for triac gating-on are Quadrants I
and III, where the gate supply is synchronized with the main ter-
minal supply (gate positive — MT2 positive, gate negative —
MT2 negative). Gate sensitivity of triacs is most optimum in
Quadrants I and III due to the inherent thyristor chip construction.
If Quadrants I and III cannot be used, the next best operating
modes are Quadrants II and III where the gate has a negative
polarity supply with an AC main terminal supply. Typically, Quad-
rant II is approximately equal in gate sensitivity to Quadrant I;
however, latching current sensitivity in Quadrant II is lowest.
Therefore, it is difficult for triacs to latch on in Quadrant II when
the main terminal current supply is very low in value.
Special consideration should be given to gating circuit design
when Quadrants I and IV are used in actual application, because
Quadrant IV has the lowest gate sensitivity of all four operating
quadrants.
General Terminology
The following definitions of the most widely-used thyristor terms,
symbols, and definitions conform to existing EIA-JEDEC stan-
dards
:
Breakover Point –
Any point on the principal voltage-current
characteristic for which the differential resistance is zero and
where the principal voltage reaches a maximum value
Principal Current –
Generic term for the current through the col-
lector junction (the current through main terminal 1 and main ter-
minal 2 of a triac or anode and cathode of an SCR)
Principal Voltage –
Voltage between the main terminals:
(1) In the case of reverse blocking thyristors, the principal volt-
age is called positive when the anode potential is higher than
the cathode potential and negative when the anode potential
is lower than the cathode potential.
(2) For bidirectional thyristors, the principal voltage is called
positive when the potential of main terminal 2 is higher than
the potential of main terminal 1.
Off State –
Condition of the thyristor corresponding to the high-
resistance, low-current portion of the principal voltage-current
characteristic between the origin and the breakover point(s) in
the switching quadrant(s)
On State –
Condition of the thyristor corresponding to the low-
resistance, low-voltage portion of the principal voltage-current
characteristic in the switching quadrant(s).
Specific Terminology
Average Gate Power Dissipation [P
G(AV)
] –
Value of gate power
which may be dissipated between the gate and main terminal 1
(or cathode) averaged over a full cycle
Breakover Current (I
BO
) –
Principal current at the breakover
point
Breakover Voltage (V
BO
) –
Principal voltage at the breakover
point
Circuit-commutated Turn-off Time (t
) –
Time interval between
the instant when the principal current has decreased to zero after
external switching of the principal voltage circuit and the instant
when the thyristor is capable of supporting a specified principal
voltage without turning on
Critical Rate-of-rise of Commutation Voltage of a Triac
(Commutating dv/dt) –
Minimum value of the rate-of-rise of prin-
cipal voltage which will cause switching from the off state to the
on state immediately following on-state current conduction in the
opposite quadrant
i
C
dt
dv
=
C
dt
dv
MT2 POSITIVE
(Positive Half Cycle)
(NMT2 NEGATIVE
MT1
MT2
+
I
GT
REF
QII
QIII
MT1
I
GATE
MT2
REF
MT1
MT2
REF
MT1
MT2
REF
QI
QIV
ALL POLARITIES ARE REFERENCED TO MT1
(
-
)
I
GATE
(+)
I
GT
-
I
GATE
(
-
)
I
GATE
(+)
-
NOTE: Alternistors will not operate in Q IV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCR3KM14L | TRIAC|700V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM14R | TRIAC|700V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM8 | TRIAC|400V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM-8 | BCR3KM-8 BCR3KM-12 Datasheet 382K/MAR.20.03 |
| BCR3PM-12 | FUSEHOLDER 3AG SHOCKSAFE FLIPTOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCR3FM-12LB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
| BCR3FM-12LB#BB0 | 功能描述:TRIAC 600V 3A 制造商:renesas electronics america 系列:- 包裝:管件 零件狀態(tài):有效 三端雙向可控硅類型:標(biāo)準(zhǔn) 電壓 - 斷態(tài):600V 電流 - 通態(tài)（It（RMS））（最大值）:3A 電壓 - 柵極觸發(fā)（Vgt）（最大值）:1.5V 電流 - 不重復(fù)浪涌 50，60Hz（Itsm）:30A @ 60Hz 電流 - 柵極觸發(fā)（Igt）（最大值）:20mA 電流 - 保持（Ih）（最大值）:- 配置:單一 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商器件封裝:TO-220FP 標(biāo)準(zhǔn)包裝:1 |
| BCR3FM-12LB-A8BB0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
| BCR3FM-12LBBB0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
| BCR3FM-12RB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:600V - 3A - Triac Medium Power Use |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。