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參數(shù)資料
| 型號： | BB401M |
| 英文描述： | MoBL® 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 晶體管| MOSFET的| N溝道| 6V的五（巴西）直| 25mA電流（?。﹟的SOT - 143VAR |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BB401M |
BB401M
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
6
V
Gate1 to source voltage
+6
– 0
V
Gate 2 to source voltage
V
G2S
I
D
Pch
±
6
V
Drain current
25
mA
Channel power dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate1 to source breakdown voltage V
(BR)G1SS
Gate2 to source breakdown voltage V
(BR)G2SS
Gate1 to cutoff current
6
—
—
V
I
D
= 200
μ
A, V
G1S
= V
G2S
= 0
I
G1
= +10
μ
A, V
G2S
= V
DS
= 0
I
G2
=
±
10
μ
A, V
G1S
= V
DS
= 0
V
G1S
= +5V, V
G2S
= V
DS
= 0
V
G2S
=
±
5V, V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 4V, I
D
= 100
μ
A
V
DS
= 5V, V
G1S
= 5V, I
D
= 100
μ
A
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 100k
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 100k
, f = 1kHz
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 100k
f = 1MHz
+6
—
—
V
±
6
—
—
V
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
I
D(op)
—
—
+100
nA
Gate2 to cutoff current
—
—
±
100
nA
Gate1 to source cutoff voltage
0.4
0.7
1.0
V
Gate2 to source cutoff voltage
0.4
0.7
1.0
V
Drain current
10
15
20
mA
Forward transfer admittance
|y
fs
|
15
20
—
mS
Input capacitance
c
iss
c
oss
c
rss
PG
2.2
3.0
3.9
pF
Output capacitance
0.9
1.2
1.6
pF
Reverse capacitance
—
0.018
0.04
pF
Power gain
22
26
—
dB
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 100k
, f = 200MHz
Noise figure
NF
—
1.3
1.9
dB
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