參數(shù)資料
型號(hào): BB401M
英文描述: MoBL® 2-Mbit (128K x 16) Static RAM
中文描述: 晶體管| MOSFET的| N溝道| 6V的五(巴西)直| 25mA電流(?。﹟的SOT - 143VAR
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 63K
代理商: BB401M
BB401M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-715A (Z)
2nd. Edition
Dec. 1, 1998
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.3 dB typ. at f = 200 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
2
1
4
3
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “AX–”.
2. BB401M is individual type number of HITACHI BBFET.
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