參數(shù)資料
型號: BAV756
廠商: NXP Semiconductors N.V.
英文描述: High-speed switching diode array
中文描述: 高速開關二極管陣列
文件頁數(shù): 2/12頁
文件大?。?/td> 73K
代理商: BAV756
1997 Oct 21
2
Philips Semiconductors
Product specification
High-speed switching diode array
BAV756S
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV756S consists of four
high-speed switching diodes
fabricated in planar technology, and
encapsulated in the small SMD
SOT363 plastic package. One pair of
diodes has a common cathode; the
other pair has a common anode.
PINNING
PIN
DESCRIPTION
1
2
3
4
5
6
anode (a1)
cathode (k1)
common anode
cathode (k2)
anode (a2)
common cathode
handbook, halfpage
6
5
4
1
2
3
MGL158
Fig.1 Simplified outline (SOT363) and symbol.
Marking code:
A7t.
MSA370
1
2
3
6
5
4
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
One or more diodes loaded.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
85
75
250
100
450
V
V
mA
mA
mA
single diode loaded; see Fig.2
all diodes loaded; see Fig.2
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 1 ms
t = 1 s
T
s
= 60
°
C; note 1
65
65
4
1
0.5
350
+150
+150
A
A
A
mW
°
C
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
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