參數(shù)資料
型號： AUIRF6215
元件分類： JFETs
英文描述： 13 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 4/11頁
文件大?。?/td> 270K
代理商： AUIRF6215
AUIRF6215
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ= 25°C, L = 14mH,
RG = 25, IAS = -6.6A. (See Figure 12)
Notes:
ISD ≤ -6.6A, di/dt ≤ -620A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300s; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
-0.20
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.29
–––
0.58
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
3.6
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-25
A
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
66
Qgs
Gate-to-Source Charge
–––
8.1
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
35
td(on)
Turn-On Delay Time
–––14–––
tr
Rise Time
–––36–––
td(off)
Turn-Off Delay Time
–––53–––
ns
tf
Fall Time
–––37–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
860
–––
Coss
Output Capacitance
–––
220
–––
pF
Crss
Reverse Transfer Capacitance
–––
130
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
-13
(Body Diode)
A
ISM
Pulsed Source Current
–––
-44
(Body Diode)
VSD
Diode Forward Voltage
–––
-1.6
V
trr
Reverse Recovery Time
–––
160
240
ns
Qrr
Reverse Recovery Charge
–––
1.2
1.7
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = -10V, ID = -6.6A
f,TJ=150°C
Conditions
VGS = -10V, See Fig. 6 & 13
f
VDD = -75V
ID = -6.6A
RG = 6.8
TJ = 25°C, IS = -6.6A, VGS = 0V f
TJ = 25°C, IF = -6.6A
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = -250A
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.6A
f,TJ=25°C
VDS = VGS, ID = -250A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = -50V, ID = -6.6A
ID = -6.6A
VDS = -120V
Conditions
RD = 12
, See Fig. 10
VGS = 0V
VDS = -25V
= 1.0MHz, See Fig. 5
VGS = 20V
VGS = -20V
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