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參數(shù)資料
| 型號： | AUIRF7103QTR |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 222K |
| 代理商： | AUIRF7103QTR |
HEXFET Power MOSFET
03/09/11
www.irf.com
1
AUIRF7103Q
PD - 97643
AUTOMOTIVE GRADE
Features
l
Advanced Planar Technology
l
Dual N Channel MOSFET
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
150°C Operating Temperature
l
Fast Switching
l
Lead-Free, RoHS Compliant
l
Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
D1
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
50V
RDS(on) max.
130m
Ω
ID
3.0A
Parameter
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
e
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
f
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
dv/dt
Peak Diode Recovery dv/dt
g
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
°C/W
RθJA
Junction-to-Ambient
fg
–––
62.5
-55 to + 175
2.4
16
12
See Fig. 16c, 16d, 19, 20
± 20
22
Max.
3.0
2.5
25
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| AUIRF7207Q | 功能描述:MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| AUIRF7303QTR | 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7304Q | 功能描述:MOSFET AUTO -20V 1 N-CH HEXFET 90mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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