參數資料
型號： AUIRF7303Q
元件分類： JFETs
英文描述： 4.9 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： ROHS COMPLIANT, SOP-8
文件頁數： 1/11頁
文件大小： 211K
代理商： AUIRF7303Q
HEXFET Power MOSFET
AUIRF7303Q
04/04/11
www.irf.com
1
AUTOMOTIVE GRADE
Features
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Advanced Planar Technology
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Dual N Channel MOSFET
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Low On-Resistance
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Dynamic dV/dT Rating
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150°C Operating Temperature
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Fast Switching
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Lead-Free, RoHS Compliant
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Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D1
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
AUIRF7303Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 10V
5.3
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.9
IDM
Pulsed Drain Current
c
20
PD @TA = 25°C
Power Dissipation
2.0
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
d
5.0
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Max.
Units
RθJA
Junction-to-Ambient
f
62.5
°C/W
W
A
°C
-55 to + 150
V(BR)DSS
30V
RDS(on) max. 0.05Ω
ID
5.3A
PD - 97654
相關PDF資料
PDF描述
AUIRF7309Q 4 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
AUIRF7309QTR 4 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
AUIRF7343Q 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
AUIRF7343QTR 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
AUIRF7640S2TR 5.8 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
AUIRF7303QTR 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7304Q 功能描述:MOSFET AUTO -20V 1 N-CH HEXFET 90mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7304QTR 功能描述:MOSFET AUTO -20V 1 N-CH HEXFET 90mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7309Q 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7309QTR 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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