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參數(shù)資料
| 型號(hào)： | AUIRF6215 |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 270K |
| 代理商： | AUIRF6215 |
AUIRF6215
HEXFET Power MOSFET
PD - 97564
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
P-Channel
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
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Repetitive Avalanche Allowed up to
Tjmax
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Lead-Free, RoHS Compliant
l
Automotive Qualified
09/6/2010
www.irf.com
1
GD
S
Gate
Drain
Source
TO-220AB
AUIRF6215
S
D
G
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
g
–––
1.4
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
-5.0
11
310
-6.6
110
0.71
± 20
Max.
-13
-9.0
-44
-55 to + 175
300
10 lbf
yin (1.1Nym)
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
-150V
RDS(on) max.
0.29
ID
-13A
S
D
G
AUTOMOTIVE GRADE
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