參數(shù)資料
型號： AUIRF1018ES
元件分類： JFETs
英文描述： 79 A, 60 V, 0.0084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù)： 4/11頁
文件大小： 243K
代理商： AUIRF1018ES
AUIRF1018ES
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for
use above this value.
ISD ≤ 47A, di/dt ≤ 1668A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.073 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.1
8.4
mΩ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
110
–––
S
RG(int)
Internal Gate Resistance
–––
0.73
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
46
69
nC
Qgs
Gate-to-Source Charge
–––
10
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
12
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
34
–––
td(on)
Turn-On Delay Time
–––
13
–––
ns
tr
Rise Time
–––
35
–––
td(off)
Turn-Off Delay Time
–––
55
–––
tf
Fall Time
–––
46
–––
Ciss
Input Capacitance
–––
2290
–––
Coss
Output Capacitance
–––
270
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
Coss eff. (ER) Effective Output Capacitance (Energy Related)h –––
390
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)g
–––
630
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
79
A
(Body Diode)
ISM
Pulsed Source Current
–––
315
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
26
39
ns
TJ = 25°C
VR = 51V,
–––
31
47
TJ = 125°C
IF = 47A
Qrr
Reverse Recovery Charge
–––
24
36
nC TJ = 25°C
di/dt = 100A/μs
f
–––
35
53
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.8
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 50V, ID = 47A
ID = 47A
RG = 10Ω
VGS = 10V f
VDD = 39V
ID = 47A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 47A, VGS = 0V f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 47A f
VDS = VGS, ID = 100μA
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 30V
Conditions
VGS = 10V f
VGS = 0V
VDS = 50V
= 1.0MHz
VGS = 0V, VDS = 0V to 60V h
VGS = 0V, VDS = 0V to 60V g
Conditions
ID = 47A
VGS = 20V
VGS = -20V
相關PDF資料
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