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參數(shù)資料
| 型號： | AUIRF1018ESTRR |
| 元件分類： | JFETs |
| 英文描述： | 79 A, 60 V, 0.0084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 243K |
| 代理商： | AUIRF1018ESTRR |
08/19/11
www.irf.com
1
HEXFET Power MOSFET
PD - 97711
AUIRF1018ES
VDSS
60V
RDS(on) typ.
7.1m
:
max.
8.4m
:
ID
79A
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
GD
S
Gate
Drain
Source
D2Pak
IRF1018ESPbF
S
D
G
D
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited) d
mJ
IAR
Avalanche Current c
A
EAR
Repetitive Avalanche Energy f
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case j
–––
1.32
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
i
–––
40
88
47
11
110
°C/W
300
21
-55 to + 175
± 20
0.76
Max.
79
56
315
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| AUIRF1018ESTRL | 79 A, 60 V, 0.0084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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| AUIRF1324S-7PTRL | 240 A, 24 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF1324 | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
| AUIRF1324S | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324S-7P | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324S-7PTRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
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