參數(shù)資料
型號: ATTINY13V-10SSUR
廠商: Atmel
文件頁數(shù): 88/176頁
文件大?。?/td> 0K
描述: MCU AVR 1KB FLASH 10MHZ 8SOIC
產(chǎn)品培訓(xùn)模塊: tinyAVR Introduction
標(biāo)準(zhǔn)包裝: 4,000
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 10MHz
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 6
程序存儲器容量: 1KB(512 x 16)
程序存儲器類型: 閃存
EEPROM 大小: 64 x 8
RAM 容量: 64 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 4x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
包裝: 帶卷 (TR)
其它名稱: ATTINY13V-10SSUR-ND
ATTINY13V-10SSURTR
19
2535J–AVR–08/10
ATtiny13
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
5.3.6
Preventing EEPROM Corruption
During periods of low VCC, the EEPROM data can be corrupted because the supply voltage is
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low VCC reset protection circuit can
be used. If a reset occurs while a write operation is in progress, the write operation will be com-
pleted provided that the power supply voltage is sufficient.
Assembly Code Example
EEPROM_read:
; Wait for completion of previous write
sbic
EECR,EEPE
rjmp
EEPROM_read
; Set up address (r17) in address register
out
EEARL, r17
; Start eeprom read by writing EERE
sbi
EECR,EERE
; Read data from data register
in
r16,EEDR
ret
C Code Example
unsigned char
EEPROM_read(unsigned char ucAddress)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
;
/* Set up address register */
EEARL = ucAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from data register */
return EEDR;
}
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ATTINY13V-10SSU-SL383-EW 制造商:Atmel Corporation 功能描述:
ATtiny13V-10SU 功能描述:8位微控制器 -MCU 1kB Flash 0.064kB EEPROM 6 I/O Pins RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
ATTINY13V-10SU SL383 制造商:Atmel Corporation 功能描述:MCU 8-bit ATtiny AVR RISC 1KB Flash 2.5V/3.3V/5V 8-Pin SOIC EIAJ T/R
ATTINY13V-10SUR 功能描述:8位微控制器 -MCU AVR 1KB FLSH 64B EE 64B SRAM-10MHz 1.8V RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
ATTINY13V-W-11 功能描述:8位微控制器 -MCU Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT