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參數(shù)資料
| 型號： | ATF10236 |
| 英文描述： | 0.5?12 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 0.5？12吉赫的低噪聲砷化鎵場效應管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | ATF10236 |
5-27
ATF-10236 Absolute Maximum Ratings
Absolute
Maximum
[1]
+5
-4
-7
I
DSS
430
175
175
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25
°
C.
3. Derate at 2.9 mW/
°
C for
T
CASE
> 25
°
C.
4. Storage above +150
°
C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175
°
C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-10236 Typical Performance, T
A
= 25
°
C
Part Number Ordering Information
Part Number
ATF-10236-TR1
ATF-10236-STR
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
Devices Per Reel
1000
10
Reel Size
7"
STRIP
Thermal Resistance:
Liquid Crystal Measurement:
θ
jc
= 350
°
C/W; T
CH
= 150
°
C
1
μ
m Spot Size
[5]
ATF-10236 Noise Parameters:
V
DS
= 2 V, I
DS
= 25 mA
Freq.
NF
O
GHz
dB
Γ
opt
Mag
0.93
0.87
0.73
0.45
0.42
0.49
Ang
18
36
74
148
-137
-80
R
N
/50
0.5
1.0
2.0
4.0
6.0
8.0
0.45
0.5
0.6
0.8
1.0
1.3
0.75
0.63
0.33
0.15
0.12
0.45
FREQUENCY (GHz)
N
O
I
DS
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
DS
.
V
DS
= 2V, f = 4.0 GHz.
N
O
0
20
10
40
50
30
60
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 25 mA.
FREQUENCY (GHz)
G
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
16
14
12
10
G
A
2.0
6.0
4.0
8.0 10.0 12.0
1.5
1.0
0.5
0
G
A
G
A
NF
O
NF
O
|S
21
|
2
MSG
MAG
0.5
1.0
2.0
4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2V, I
DS
= 25 mA, T
A
= 25
°
C.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-10736-STR | 0.5-12 GHz General Purpose Gallium Arsenide FET |
| ATF10736 | 0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TRI | 0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TR1 | 0.5-12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736 | 0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪聲砷化鎵 FET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-10236 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF1040 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST SWITCHING THYRISTOR |
| ATF1040S18S | 制造商:n/a 功能描述:Power Semiconductor |
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