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參數(shù)資料
| 型號： | ATF10236 |
| 英文描述： | 0.5?12 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 0.5？12吉赫的低噪聲砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | ATF10236 |
5-26
0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
Low Noise Figure:
0.8dB Typical at 4GHz
Low Bias:
V
DS
= 2 V, I
DS
= 20mA
High Associated Gain:
13.0dB Typical at 4GHz
High Output Power:
20.0dBm
Typical P
1dB
at 4GHz
Cost Effective Ceramic
Microstrip Package
Tape-And-Reel Packaging
Option Available
[1]
ATF-10236
36 micro-X Package
Description
The ATF-10236 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operating in the 0.5-12GHz frequency
range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA
Parameters and Test Conditions
Units Min.
dB
dB
dB
dB
dB
dB
dBm
Typ. Max.
0.6
0.8
1.0
16.5
13.0
10.5
20.0
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
1.0
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
12.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
f = 4.0 GHz
dB
12.0
140
130
-1.3
mmho
mA
V
80
70
-3.0
180
-0.8
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8697E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-10736-STR | 0.5-12 GHz General Purpose Gallium Arsenide FET |
| ATF10736 | 0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TRI | 0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TR1 | 0.5-12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736 | 0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪聲砷化鎵 FET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-10236 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF1040 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST SWITCHING THYRISTOR |
| ATF1040S18S | 制造商:n/a 功能描述:Power Semiconductor |
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