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參數(shù)資料
| 型號： | ATF-10736-STR |
| 英文描述： | 0.5-12 GHz General Purpose Gallium Arsenide FET |
| 中文描述： | 0.5-12吉赫通用砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | ATF-10736-STR |
5-29
0.5–12 GHz General Purpose
Gallium Arsenide FET
Technical Data
Features
High Associated Gain:
13.0dB Typical at 4GHz
Low Bias:
V
DS
= 2 V, I
DS
= 25mA
High Output Power:
20.0dBm typical P
1 dB
at 4GHz
Low Noise Figure:
1.2dB Typical at 4GHz
Cost Effective Ceramic
Microstrip Package
Tape-and-Reel Packaging
Option Available
[1]
ATF-10736
36 micro-X Package
Description
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA
Parameters and Test Conditions
Units Min.
dB
dB
dB
dB
dB
dB
dBm
Typ. Max.
0.9
1.2
1.4
16.5
13.0
10.5
20.0
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
1.4
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
12.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
f = 4.0 GHz
dB
12.0
140
130
-1.3
mmho
mA
V
70
70
-4.0
180
-0.5
5965-8698E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF10736 | 0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TRI | 0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TR1 | 0.5-12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736 | 0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪聲砷化鎵 FET) |
| ATF-10XXX | Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-10736-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TRI | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10XXX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| ATF13036 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
| ATF13100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | CHIP |
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