參數(shù)資料
型號(hào)： ATF-58143-BLKG
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁數(shù)： 7/9頁
文件大?。?/td> 232K
代理商： ATF-58143-BLKG
7
ATF-58143 Typical Scattering Parameters, V
DS = 4V, IDS = 30 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.99
16.3
28.16
25.6
169.65
41.08
0.01
81.1
0.65
10.17
34.62
0.5
0.83
94.5
25.82
19.5
125.68
28.95
0.04
46.2
0.45
54.83
27.39
0.9
0.76
133.1
22.52
13.4
104.58
27.00
0.04
33.9
0.33
76.45
24.76
1
0.75
139.7
21.83
12.3
100.73
26.74
0.05
32.0
0.31
80.28
24.29
1.5
0.72
162.2
18.94
8.9
85.42
25.79
0.05
26.9
0.24
95.17
22.37
1.9
0.71
172.7
17.18
7.2
75.68
25.25
0.05
24.8
0.21
104.27
21.21
2
0.70
174.9
16.79
6.9
73.47
25.09
0.06
24.4
0.21
106.18
20.94
2.5
0.69
173.5
14.67
5.4
59.58
24.15
0.06
21.7
0.18
117.35
19.41
3
0.68
161.6
13.05
4.5
46.88
23.33
0.07
19.0
0.16
124.85
18.19
4
0.67
141.9
11.00
3.5
28.55
22.14
0.08
14.1
0.13
137.33
16.57
5
0.69
123.1
9.29
2.9
10.32
21.13
0.09
7.3
0.12
42.65
15.21
6
0.73
108.9
7.73
2.4
7.48
20.28
0.10
1.3
0.13
158.73
14.00
7
0.76
96.3
6.16
2.0
23.78
19.80
0.10
9.7
0.17
125.87
12.98
8
0.79
82.4
4.74
1.7
39.33
19.32
0.11
16.9
0.20
104.88
12.03
9
0.82
71.2
3.63
1.5
55.93
18.49
0.12
26.7
0.25
83.12
11.06
10
0.85
60.1
2.63
1.4
73.30
17.74
0.13
39.3
0.31
61.03
10.19
11
0.87
47.2
1.52
1.2
90.53
17.31
0.14
52.2
0.38
41.33
9.42
12
0.89
36.2
0.38
1.0
106.67 17.12
0.14
64.5
0.44
22.65
8.75
13
0.91
26.6
0.80
0.9
121.58 17.09
0.14
75.2
0.49
6.28
8.15
14
0.93
17.2
2.01
0.8
135.15 17.15
0.14
84.2
0.54
7.48
7.57
15
0.94
9.2
3.24
0.7
148.98 17.22
0.14
94.3
0.59
22.78
6.99
16
0.94
1.2
4.43
0.6
164.25 17.36
0.14
106.1
0.64
39.22
6.46
17
0.92
10.5
5.79
0.5
59.55
17.68
0.13
119.3
0.68
53.35
5.94
18
0.91
17.6
6.74
0.5
170.70
17.94
0.13
127.5
0.69
71.73
5.60
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.14
0.38
9.7
0.03
24.85
0.9
0.23
0.36
44.4
0.04
22.21
1.0
0.25
0.35
54.0
0.04
21.51
1.5
0.35
0.32
78.7
0.04
19.21
1.9
0.47
0.3
100.7
0.04
17.71
2.0
0.49
0.3
105.4
0.04
17.39
2.4
0.55
0.28
124.0
0.04
16.25
3.0
0.61
0.3
153.9
0.05
14.86
3.9
0.78
0.35
157.2
0.07
13.51
5.0
0.91
0.42
120.8
0.1
12.05
5.8
1.05
0.49
101.2
0.16
11.14
6.0
1.11
0.53
97.4
0.19
11.14
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements F
min is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, V
DS = 4V, IDS = 30 mA
Figure 20. MSG/MAG and S21 vs. Frequency
at 4V, 30 mA.
FREQUENCY (GHz)
MSG/MAG
and
S
21
(dB)
0
20
10
15
5
40
35
30
25
20
15
10
5
0
-5
-10
S21
MSG
相關(guān)PDF資料
PDF描述
ATF-58143-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATP101 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
ATP102 40 A, 30 V, 0.0185 ohm, P-CHANNEL, Si, POWER, MOSFET
ATP103 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET
ATP103 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-58143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-58143-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*