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參數(shù)資料
| 型號： | ATF-58143-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 232K |
| 代理商： | ATF-58143-BLKG |
ATF-58143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF58143 is a high dynamic range,
low noise EPHEMT housed in a 4lead SC70 (SOT343)
surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF58143 ideal as low noise ampli
fier for cellular/PCS/WCDMA base stations, wireless lo
cal loop, and other applications that require low noise
and high linearity performance in the 450 MHz to 6 GHz
frequency range.
Surface Mount Package SOT-343
Features
Low noise and high linearity performance
Enhancement Mode Technology[1]
Excellent uniformity in product specifications
Low cost surface mount small plastic package SOT
343 (4 lead SC70) in TapeandReel packaging option
available
Leadfree option available
Specifications
2 GHz; 3V, 30 mA (Typ.)
30.5 dBm output 3rd order intercept
19 dBm output power at 1 dB
0.5 dB noise figure
16.5 dB associated gain
Applications
Q1 LNA for cellular/PCS/WCDMA base stations
Q1, Q2 LNA and Predriver amplifier for 3–4 GHz WLL
Other low noise and high linearity applications at 450
MHz to 6 GHz
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Pin Connections and Package Marking
Note:
Top View. Package marking provides orientation and identification
“8F” = Device Code
“x” = Date code character
identifies month of manufacture.
SOURCE
DRAIN
GATE
SOURCE
8Fx
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge Damage and Control.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-58143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATP101 | 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP102 | 40 A, 30 V, 0.0185 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP103 | 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP103 | 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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