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參數(shù)資料
| 型號： | ATF-541M4-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁數(shù)： | 9/17頁 |
| 文件大?。?/td> | 731K |
| 代理商： | ATF-541M4-TR1 |
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www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0621EN
AV01-0922EN - January 21, 2009
Tape Dimensions
P
P 0
P 2
F
W
C
D 1
D
E
A 0
5
°MAX.
t1 (CARRIER TAPE THICKNESS)
T t (COVER TAPE THICKNESS)
5
°MAX.
B 0
K 0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A 0
B 0
K 0
P
D 1
1.40
± 0.05
1.53
± 0.05
0.80
± 0.05
4.00
± 0.10
0.80
± 0.05
0.055
± 0.002
0.064
± 0.002
0.031
± 0.002
0.157
± 0.004
0.031
± 0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P 0
E
1.50
± 0.10
4.00
± 0.10
1.75
± 0.10
0.060
± 0.004
0.157
± 0.004
0.069
± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254
± 0.02
0.315 + 0.012 - 0.004
0.010
± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P 2
3.50
± 0.05
2.00
± 0.05
0.138
± 0.002
0.079
± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
T t
5.40
± 0.10
0.062
± 0.001
0.213
± 0.004
0.0024
± 0.00004
COVER TAPE
A 0
B 0
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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